Field effect transistors having tapered gate electrodes for prov

Details Field effect transistors having tapered gate electrodes for prov Field effect transistors having tapered gate electrodes for prov

1998-05-14

2000-04-04

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257345, 257389, 257401, 438291, 438307, 438300, H01L 31119, H01L 2976

Patent

active

060464747

ABSTRACT:
Field effect transistors having tapered gate electrodes include a body region of first conductivity type extending to a surface of a semiconductor substrate. Source and drain regions of second conductivity type are formed in the substrate and a gate electrode is formed on a portion of the surface extending opposite the body region and between the source and drain regions. A gate electrode insulating layer is also disposed between the gate electrode and the surface. To improve the transistor's withstand voltage capability by reducing field crowding, the gate electrode insulating layer is preferably formed to have a tapered thickness which increases in a direction from the source region to the drain region, and to reduce on-state resistance the drain region is formed in a self-aligned manner to the gate electrode.

REFERENCES:
patent: 4587713 (1986-05-01), Goodman et al.
patent: 5264719 (1993-11-01), Beasom
patent: 5444279 (1995-08-01), Lee
patent: 5548133 (1996-08-01), Kinzer
patent: 5917217 (1999-06-01), Kitamura et al.
patent: 5932897 (1999-08-01), Kawaguchi et al.

Affiliated with

Also associated with

Rating

Field effect transistors having tapered gate electrodes for prov does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field effect transistors having tapered gate electrodes for prov, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect transistors having tapered gate electrodes for prov will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-367488