Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-07-10
2010-02-02
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S332000, C257S333000, C257S390000, C257S396000, C257SE27014
Reexamination Certificate
active
07655976
ABSTRACT:
Provided are a field effect transistor, a method of manufacturing the same, and an electronic device including the field effect transistor. The field effect transistor may have a structure in which a double gate field effect transistor and a recess channel array transistor are formed in a single transistor in order to improve a short channel effect which occurs as field effect transistors become more highly integrated, a method of manufacturing the same, and an electronic device including the field effect transistor. The field effect transistor can exhibit stable device characteristics even when more highly integrated in such a manner that both the length and width of a channel increase and particularly the channel can be significantly long, and can be manufactured simply.
REFERENCES:
patent: 2008/0246081 (2008-10-01), Li et al.
patent: 2009/0032866 (2009-02-01), McDaniel
patent: 2000-077659 (2000-03-01), None
patent: 1020050015975 (2005-02-01), None
patent: 1020050108916 (2005-11-01), None
Lee Ji-Young
Seo Jun
Myers Bigel & Sibley & Sajovec
Ngo Ngan
Samsung Electronics Co,. Ltd.
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