Field effect transistors having multiple stacked channels

Details Field effect transistors having multiple stacked channels Field effect transistors having multiple stacked channels

2006-04-11

2006-04-11

Smith, Zandra V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S332000, C257S401000

Reexamination Certificate

active

07026688

ABSTRACT:
Integrated circuit field effect transistor devices include a substrate having a surface and an active channel pattern on the surface. The active channel pattern includes channels that are stacked upon one another and are spaced apart from one another to define at least one tunnel between adjacent channels. A gate electrode surrounds the channels and extends through the at least one tunnel. A pair of source/drain regions also is provided. Integrated circuit field effect transistors are manufactured, by forming a pre-active pattern on a surface of a substrate. The pre-active pattern includes a series of interchannel layers and channel layers stacked alternately upon each other. Source/drain regions are formed on the substrate at opposite ends of the pre-active pattern. The interchannel layers are selectively removed to form tunnels. A gate electrode is formed in the tunnels and surrounding the channels.

REFERENCES:
patent: 4996574 (1991-02-01), Shirasaki
patent: 5221849 (1993-06-01), Goronkin et al.
patent: 5412224 (1995-05-01), Goronkin et al.
patent: 5583362 (1996-12-01), Maegawa
patent: 5965914 (1999-10-01), Miyamoto
patent: 6190234 (2001-02-01), Swedek et al.
patent: 6413802 (2002-07-01), Hu et al.
patent: 6440806 (2002-08-01), Xiang
patent: 2002/0149031 (2002-10-01), Kim et al.
patent: 2004/0056285 (2004-03-01), Cabral et al.
patent: 1 056 135 (2000-11-01), None
patent: 11-8390 (1999-01-01), None
patent: 2000-340793 (2000-12-01), None
patent: 95002202 (1995-03-01), None
Combined Search and Examination Report Under Sections 17 and 18(3), GB 0231985.4, Mar. 17, 2004.
Notice to Submit Response, Korean Patent Application No. 10-2002-0059886, Sep. 2, 2004.
Translation of an Official Letter as Issued by the German Patent and Trademark Office, Application No. 103 39 920.8-33, Nov. 4, 2004.

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