Field effect transistors and methods for fabricating the same

Details Field effect transistors and methods for fabricating the same Field effect transistors and methods for fabricating the same

2006-07-13

2009-10-20

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21622

Reexamination Certificate

active

07605045

ABSTRACT:
Field effect transistors and methods for fabricating field effect transistors are provided. A method, in accordance with an exemplary embodiment of the invention, comprises forming a polycrystalline silicon gate electrode overlying a silicon substrate. The gate electrode has two parallel sidewalls. Two sidewall spacers are fabricated overlying the silicon substrate. Each of the two sidewall spacers has a sidewall that is adjacent to one of the two parallel sidewalls of the gate electrode. A portion of the gate electrode between the two sidewall spacers is removed.

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