Field effect transistor with suppressed corner leakage...

Details Field effect transistor with suppressed corner leakage... Field effect transistor with suppressed corner leakage...

2008-08-12

2010-11-23

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S199000, C438S680000, C257SE21170, C257SE21051, C257SE21054, C257SE21267, C257SE21278, C257SE21293, C257SE21421, C257SE21632

Reexamination Certificate

active

07838353

ABSTRACT:
Disclosed are embodiments of field effect transistors (FETs) having suppressed sub-threshold corner leakage, as a function of channel material band-edge modulation. Specifically, the FET channel region is formed with different materials at the edges as compared to the center. Different materials with different band structures and specific locations of those materials are selected in order to effectively raise the threshold voltage (Vt) at the edges of the channel region relative to the Vt at the center of the channel region and, thereby to suppress of sub-threshold corner leakage. Also disclosed are design structures for such FETs and method embodiments for forming such FETs.

REFERENCES:
patent: 6084276 (2000-07-01), Gambino et al.
patent: 6097069 (2000-08-01), Brown et al.
patent: 6100143 (2000-08-01), Brown et al.
patent: 6339232 (2002-01-01), Takagi
patent: 6358799 (2002-03-01), Odanaka et al.
patent: 6495424 (2002-12-01), Kunikiyo
patent: 6605520 (2003-08-01), Cheong
patent: 6613635 (2003-09-01), Oda et al.
patent: 6924536 (2005-08-01), Nishiyama et al.
patent: 6974998 (2005-12-01), Liu et al.
patent: 7291528 (2007-11-01), Chen et al.
patent: 7659537 (2010-02-01), Tezuka et al.
patent: 2001/0041421 (2001-11-01), Park et al.
patent: 2002/0037619 (2002-03-01), Sugihara et al.
patent: 2002/0187616 (2002-12-01), Lai et al.
patent: 2003/0094637 (2003-05-01), Awano
patent: 2004/0207024 (2004-10-01), Eikyu
patent: 2005/0048703 (2005-03-01), Dennard et al.
patent: 2005/0227452 (2005-10-01), Ohashi et al.
patent: 2005/0269595 (2005-12-01), Tezuka
patent: 2006/0079068 (2006-04-01), Sheu et al.
patent: 2006/0086987 (2006-04-01), Chen et al.
patent: 2006/0141796 (2006-06-01), Kim et al.
patent: 2006/0197158 (2006-09-01), Babcock et al.
patent: 2006/0252238 (2006-11-01), Li
patent: 2007/0018205 (2007-01-01), Chidambarrao et al.
patent: 2007/0059897 (2007-03-01), Tilke et al.
patent: 2007/0108526 (2007-05-01), Kohyama
patent: 2007/0254461 (2007-11-01), Wei et al.
patent: 2008/0003825 (2008-01-01), Stejskal et al.
patent: 2008/0006884 (2008-01-01), Yagishita
patent: 2008/0044981 (2008-02-01), Jee et al.
patent: 2008/0057635 (2008-03-01), Chen
patent: 2010/0013021 (2010-01-01), Chen et al.

Affiliated with

Also associated with

Rating

Field effect transistor with suppressed corner leakage... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field effect transistor with suppressed corner leakage..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect transistor with suppressed corner leakage... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4239231