Field effect transistor with self-aligned source and heavy...

Details Field effect transistor with self-aligned source and heavy... Field effect transistor with self-aligned source and heavy...

2011-06-07

2011-06-07

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S259000, C438S270000, C257SE21683

Reexamination Certificate

active

07955920

ABSTRACT:
A field effect transistor includes a plurality of trenches extending into a semiconductor region of a first conductivity type. The plurality of trenches include a plurality of gated trenches and a plurality of non-gated trenches. A body region of a second conductivity extends in the semiconductor region between adjacent trenches. A dielectric material fills a bottom portion of each of the gated and non-gated trenches. A gate electrode is disposed in each gated trench. A conductive material of the second conductivity type is disposed in each non-gated trench such that the conductive material and contacts corresponding body regions along sidewalls of the non-gated trench.

REFERENCES:
patent: 4893160 (1990-01-01), Blanchard
patent: 4941026 (1990-07-01), Temple
patent: 4954854 (1990-09-01), Dhong et al.
patent: 5126807 (1992-06-01), Baba et al.
patent: 5998822 (1999-12-01), Wada
patent: 6174773 (2001-01-01), Fujishima
patent: 6337499 (2002-01-01), Werner
patent: 6376878 (2002-04-01), Kocon
patent: 6586800 (2003-07-01), Brown
patent: 6683346 (2004-01-01), Zeng
patent: 6690062 (2004-02-01), Henninger et al.
patent: 6750508 (2004-06-01), Fujishima
patent: 6803626 (2004-10-01), Sapp et al.
patent: 7052982 (2006-05-01), Hshieh
patent: 7064385 (2006-06-01), Dudek
patent: 7250343 (2007-07-01), Kotek
patent: 7345342 (2008-03-01), Challa
patent: 7393749 (2008-07-01), Yilmaz et al.
patent: 7504303 (2009-03-01), Yilmaz
patent: 7514322 (2009-04-01), Yilmaz et al.
patent: 7625779 (2009-12-01), Takahashi
patent: 7625799 (2009-12-01), Yilmaz et al.
patent: 2005/0062105 (2005-03-01), Nakamura et al.
patent: 2005/0181564 (2005-08-01), Hshieh et al.
patent: 2005/0215027 (2005-09-01), Williams et al.
patent: 2006/0180855 (2006-08-01), Bhalla et al.
patent: 2006/0267088 (2006-11-01), Sharp et al.
patent: 2006/0273380 (2006-12-01), Hshieh
patent: 2006/0273386 (2006-12-01), Yilmaz
patent: 2008/0135925 (2008-06-01), Takemori et al.
patent: 504290 (2008-04-01), None
patent: 112006001516 (2008-04-01), None
patent: 2008/546216 (2008-12-01), None
patent: WO 01/88997 (2001-11-01), None
patent: WO 2006/135746 (2006-12-01), None
International Search Report of the International Searching Authority for Application No. PCT/US2006/0022474, mailed on Jan. 14, 2008, 3 pages.
Written Opinion of the International Searching Authority for Application No. PCT/US2006/0022474, mailed on Jan. 14, 2008, 6 pages.
International Preliminary Report on Patentability for Application No. PCT/US2006/022474, mailed on Mar. 31, 2009, 7 pages.
Japanese Office Action for Application No. 2008-515966, Jul. 8, 2008, 3 pages.
Notice of Allowance for U.S. Appl. No. 11/450,903, mailed on Apr. 4, 2008, 9 pages.
Notice of Allowance for U.S. Appl. No. 12/125,242, Sep. 19, 2008, 6 pages.
Notice of Allowance for U.S. Appl. No. 12/125,242, Nov. 28, 2008, 8 pages.
Notice of Allowance for U.S. Appl. No. 12/418,949, mailed on Aug. 7, 2009, 10 pages.
Notice of Allowance for U.S. Appl. No. 12/582,487, mailed on Mar. 23, 2010, 9 pages.

Affiliated with

Also associated with

Rating

Field effect transistor with self-aligned source and heavy... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field effect transistor with self-aligned source and heavy..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect transistor with self-aligned source and heavy... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2641564