Field effect transistor with metal source/drain regions

Details Field effect transistor with metal source/drain regions Field effect transistor with metal source/drain regions

2011-02-01

2011-02-01

Coleman, W. David (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S300000, C257SE21425, C257SE21431

Reexamination Certificate

active

07879675

ABSTRACT:
A semiconductor device comprising a gate electrode formed on a gate dielectric layer formed on a semiconductor film. A pair of source/drain regions are formed adjacent the channel region on opposite sides of the gate electrode. The source and drain regions each comprise a semiconductor portion adjacent to and in contact with the semiconductor channel and a metal portion adjacent to and in contact with the semiconductor portion.

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