Field-effect transistor with horizontal self-aligned gates...

Details Field-effect transistor with horizontal self-aligned gates... Field-effect transistor with horizontal self-aligned gates...

2006-04-04

2006-04-04

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S346000, C257S213000, C438S180000

Reexamination Certificate

active

07022562

ABSTRACT:
A field-effect transistor including: a support substrate, an active area forming a channel; a first active gate which is associated with a first face of the active area; source and drain areas which are formed in the active area and which are self-aligned on the first gate; a second insulated gate which is associated with a second face of the active region opposite the first face of the active region. According to the invention, the second gate is self-aligned on the first gate and, together with the first gate, forms a mesa structure on a support substrate.

REFERENCES:
patent: 5349228 (1994-09-01), Neudeck et al.
patent: 5397909 (1995-03-01), Moslehi
patent: 5583362 (1996-12-01), Maegawa
patent: 5773331 (1998-06-01), Solomon et al.
patent: 6166412 (2000-12-01), Kim et al.
patent: 6380039 (2002-04-01), Badenes et al.
patent: 6492210 (2002-12-01), Wieczorek et al.

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