Field effect transistor with a high breakdown voltage and...

Details Field effect transistor with a high breakdown voltage and... Field effect transistor with a high breakdown voltage and...

2006-02-17

2008-12-16

Tran, Long K (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S336000, C257S344000, C257S401000, C257S408000, C257SE29148, C257SE29149, C257SE29265, C257SE29320, C257SE21143, C257SE21435

Reexamination Certificate

active

07465978

ABSTRACT:
An electric field effect transistor of high breakdown voltage and a method of manufacturing the same are disclosed. A recessed portion is formed at the channel region and is filled by a protective oxide layer. Lightly doped source/drain regions are formed under the protective oxide layer. The protective oxide layer protects the lightly doped source/drain regions. Accordingly, the protective oxide layer prevents the electric field from being concentrated to a bottom corner portion of the gate structure. In addition, the effective channel length is elongated since an electric power source is connected to heavily doped source/drain regions from an outside source of the transistor, instead of being connected to lightly doped source/drain regions.

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patent: 20010084781 (2001-09-01), None

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