Field effect transistor using carbon based stress liner

Details Field effect transistor using carbon based stress liner Field effect transistor using carbon based stress liner

2007-06-08

2010-12-14

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE51038, C257SE21041, C257SE21270

Reexamination Certificate

active

07851288

ABSTRACT:
A stress liner for use within a semiconductor structure that includes a field effect device has a dielectric constant less than about 7 and a compressive stress greater than about 5 GPa. The stress liner may be formed of a carbon based material, preferably a tetrahedral amorphous carbon (ta-C) material including at least about 60 atomic percent carbon and no greater than C about 40 atomic percent hydrogen. The carbon based material may be either a dielectric material, or given appropriate additional dielectric isolation structures, a semiconductor material. In particular, a ta-C stress liner may be formed using a filtered cathodic vacuum arc (FCVA) physical vapor deposition (PVD) method.

REFERENCES:
patent: 6342733 (2002-01-01), Hu et al.
patent: 7030468 (2006-04-01), Gates et al.
patent: 7507300 (2009-03-01), Boykin et al.
patent: 7615434 (2009-11-01), Sun et al.
patent: 2003/0190476 (2003-10-01), Veerasamy et al.
patent: 2004/0061118 (2004-04-01), Yamazaki et al.
patent: 2005/0186722 (2005-08-01), Cheng et al.
patent: 2005/0285187 (2005-12-01), Bryant et al.
patent: 2007/0132375 (2007-06-01), Bachmann et al.
patent: 2007/0200179 (2007-08-01), Chen
Thompson et al., in “Future of Strained Si/Semiconductors in Nanoscale MOSFETS,” IEDM 2006, Paper 27.1.
Fallon et al., in “Properties of filtered-ion-beam-deposited diamond-like carbon as a function of ion energy,” Phys. Rev. B, 48, 4777 (1993).
Ha et al., in “Intrinsic stress of DLC film prepared by RF plasma CVD and filtered cathodic arc PVD,” IEEE International Conference on Plasma Science, Paper 6D7, Jun. 2005, Monterey, CA.
Grill, in “Plasma-deposited diamond-like carbon and related materials,” IBM J. Res. Devel., 43, 147 (1999).
Fulton, et al. in “New Ion-assisted Filtered Cathodic Arc Deposition (IFCAD) technology for producing advanced thin-films on temperature-sensitive substrates”, in Solar Optical Materials XVI, Carl M. Lampert, Gaes-Goran Granqvist, Editors, Proceedings of SPIE vol. 3789, 29-37 (1999).

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