Field-effect transistor, semiconductor device, a method for...

Details Field-effect transistor, semiconductor device, a method for... Field-effect transistor, semiconductor device, a method for...

2011-07-19

2011-07-19

Nguyen, Cuong Q (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S590000

Reexamination Certificate

active

07981744

ABSTRACT:
A field-effect transistor which comprises a buffer layer and a barrier layer each of which is made of a Group III nitride compound semiconductor and has a channel at the interface inside of the buffer layer to the barrier layer, wherein the barrier layer has multiple-layer structure comprising an abruct interface providing layer which composes the lowest semiconductor layer in said barrier layer and whose composition varies rapidly at the interface of said buffer layer, and an electrode connection plane providing layer which constructs the uppermost semiconductor layer and whose upper surface is formed flat.

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Translated Chinese Office Action dated Apr. 18, 2008.
Lu, W., et al., “Cyclotron resonance and magnetotransport mearsurements in AlxGa1-xzN/GaN heterostructures for x=0.15-0.30”, Applied Physics Letters, vol. 80, No. 3, Jan. 21, 2002, pp. 431-433.
Y. H. Jeong, et al., “Enhancement of the Electrical Properties of A1GaN/GaN HFETs by Using Undoped Semi-Insulating GaN”, Journal of the Korean Physical Society, Jan. 2004, vol. 44, No. 1, pp. 140-143.
H. X. Wang, et al., “Influence of Carrier gas on the Morphology and Structure of GaN Layers Grown on Sapphire Substrate by Six-Wafer Metal Organic Chemical Vapor Deposition System”, Journal of Crystal Growth, 2001, vol. 233, pp. 681-686.
English translation of the German Office Action dated Aug. 11, 2009.
Wang, et al. “Influence of carrier gas on the morphology and structure of GaN layers grown on sapphire substrate by six-wafer metal organic chemical vapor deposition system”, in Journal of Crystal Growth, 2001, vol. 233, pp. 681-686.

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