Field effect transistor having vertical channel structure

Details Field effect transistor having vertical channel structure Field effect transistor having vertical channel structure

2005-11-28

2008-10-21

Warren, Matthew E (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S329000, C257S496000, C257SE29130, C257SE29118

Reexamination Certificate

active

07439595

ABSTRACT:
A first SiO2thin film, a tungsten gate electrode, and a second SiO2thin film are selectively formed on a first n+-type GaN contact semiconductor layer in that order and in a multilayer film structure having the three layers, a stripe-shaped opening is formed. Via the opening, an undoped GaN channel semiconductor layer and the second n+-type GaN contact semiconductor layer are formed so that both the layers are regrown by, for example, metal organic chemical vapor deposition. A source electrode and a drain electrode are formed so as to contact the corresponding second and first n+-type GaN contact semiconductor layers. The regrown undoped GaN channel semiconductor layer and the regrown second n+-type GaN contact semiconductor layer are horizontally grown portions and hence, the contact area of the electrode can be made larger than the area of the opening.

REFERENCES:
patent: 5889298 (1999-03-01), Plumton et al.
patent: 6107660 (2000-08-01), Yang et al.
patent: 6506638 (2003-01-01), Yu
patent: 7242056 (2007-07-01), Chaudhry et al.
J-I. Nishizawa, et al.; “The 2.45 GHz 36 W CW Si Recessed Gate Type SIT with High Gain and High Voltage Operation,” IEEE Transactions on Electron Devices, vol. 47, No. 2, Feb. 2000, pp. 482-487.
V. Camarchia, et al.; “Physics-Based Modeling of Submicron GaN Permeable Base Transistors,” IEEE Electron Device Letters, vol. 23, No. 6, Jun. 2002, pp. 303-305.

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