Field effect transistor having a doped gate electrode with...

Details Field effect transistor having a doped gate electrode with... Field effect transistor having a doped gate electrode with...

2004-03-02

2009-02-24

Lee, Eugene (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S270000, C438S291000, C438S589000, C257S330000, C257S332000

Reexamination Certificate

active

07494872

ABSTRACT:
By forming an implantation mask prior to the definition of the drain and the source areas, an effective decoupling of the gate dopant concentration from that of the drain and source concentrations is achieved. Moreover, after removal of the implantation mask, the lateral dimension of the gate electrode may be defined by well-established sidewall spacer techniques, thereby providing a scaling advantage with respect to conventional approaches based on photolithography and anisotropic etching.

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