Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-07-12
2011-11-08
Fahmy, Wael (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S025000, C257S379000, C365S151000, C438S195000, C438S280000
Reexamination Certificate
active
08053846
ABSTRACT:
A transistor includes: a semiconductor substrate; a channel region arranged on the semiconductor substrate; a source and a drain respectively arranged on either side of the channel region; and a conductive nano tube gate arranged on the semiconductor substrate to transverse the channel region between the source and the drain. Its method of manufacture includes: arranging a conductive nano tube on a surface of a semiconductor substrate; defining source and drain regions having predetermined sizes and traversing the nano tube; forming a metal layer on the source and drain regions; removing a portion of the metal layer formed on the nano tube to respectively form source and drain electrodes separated from the metal layer on either side of the nano tube; and doping a channel region below the nano tube arranged between the source and drain electrodes by ion-implanting.
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Cha Seung-Nam
Jang Jae-Eun
Jin Yong-Wan
Jung Jae-Eun
Song Byong-Gwon
Cantor & Colburn LLP
Fahmy Wael
Ingham John C
Samsung Electronics Co,. Ltd.
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