Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-03-29
2005-03-29
Thomas, Tom (Department: 2815)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S191000, C438S197000, C438S172000, C438S493000
Reexamination Certificate
active
06872625
ABSTRACT:
Field-Effect Transistor Based on Embedded Cluster Structures and Process for Its Production In field-effect transistors, semiconductor clusters, which can extend from the source region to the drain region and which can be implemented in two ways, are embedded in one or a plurality of layers. In a first embodiment, the semiconductor material of the adjacent channel region can be strained by the clusters and the effective mass can thus be reduced by altering the energy band structure and the charge carrier mobility can be increased. In a second embodiment, the clusters themselves can be used as a canal region. These two embodiments can also appear in mixed forms. The invention can be applied to the Si material system with SiGe clusters or to the GaAs material system with InGaAs clusters or to other material systems.
REFERENCES:
patent: 4710788 (1987-12-01), D{hacek over (a)}mbkes et al.
patent: 4814838 (1989-03-01), Kuroda et al.
patent: 4827320 (1989-05-01), Morkoc et al.
patent: 4865659 (1989-09-01), Shigeta et al.
patent: 4994866 (1991-02-01), Awano
patent: 5057880 (1991-10-01), Eshita et al.
patent: 5075742 (1991-12-01), Gerard et al.
patent: 5227644 (1993-07-01), Ueno
patent: 5241214 (1993-08-01), Herbots et al.
patent: 5245208 (1993-09-01), Eimori
patent: 5331185 (1994-07-01), Kuwata
patent: 5357119 (1994-10-01), Wang et al.
patent: 5461243 (1995-10-01), Ek et al.
patent: 5461250 (1995-10-01), Burghartz et al.
patent: 5561302 (1996-10-01), Candelaria
patent: 6424004 (2002-07-01), Kim et al.
patent: 6723621 (2004-04-01), Cardone et al.
patent: 0 437 385 (1991-07-01), None
patent: 0 921 575 (1999-06-01), None
patent: 03227530 (1991-10-01), None
patent: 05129635 (1993-05-01), None
Welser, L., et al., Electron Mobility Enhancement in Strained-Si N-Type Metal-Oxide-Semiconductor Field-Effect Transistors, IEEE Electron Device Letters, vol. 15, No. 3, Mar. 1994, pp. 100-102.
Murakami, E., et al., Ultra High Hole Mobility in Strain-Controlled Si-Ge Modulation-Doped Fet, Central Research Laboratory, Hitachi, Ltd, Kokubunji, Tokyo 185, Japan, 4 pages.
Wang, S.J., et al., High Mole Mobility Transistor (HHMT) With Dual Si/Ge0.4Si0.6/Si Wells Structure Grown by Si MBE, Microelectronics Laboratory, Department of Electrical Engineering, National Cheng Kung University, No. 1 Ta Hseuh Road, Tainan, Taiwan, Republic of China, 4 Pages.
Eberl Karl
Schmidt Oliver G.
Christie Parker and Hale, LLP
Max-Planck-Gesellschaft zur Foerderung der Wissenschaften e.V.
Richards N. Drew
Thomas Tom
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