Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – Having specific type of active device
Patent
1998-04-16
2000-03-28
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
Having specific type of active device
257202, 257204, 257371, 257372, 257373, 257901, 257909, H01L 2710
Patent
active
060435224
ABSTRACT:
A semiconductor device capable of solving a problem of a conventional semiconductor device in that a high density integration cannot be expected because each cell, which includes a pair of N and P wells disposed adjacently, requires a countermeasure against latchup individually. The high density integration prevents an effective countermeasure against latchup. The present semiconductor device arranges two cells, which are adjacent in the direction of an alignment of the N wells and P wells, in opposite directions so that two P wells (or two N wells) of the two adjacent cells are disposed successively, and includes an isolation layer extending across the two adjacent cells to enclose the two successively disposed P wells, thereby isolating the two P wells collectively from the substrate.
REFERENCES:
patent: 3648130 (1972-03-01), Castrucci et al.
patent: 4661815 (1987-04-01), Takayama et al.
patent: 5723875 (1998-03-01), Abe et al.
Hatakenaka Makoto
Kitaguchi Akira
Matsuo Masaaki
Nakajima Michio
Shiroshima Kiyoyuki
Baumeister Bradley William
Jackson, Jr. Jerome
Mitsubishi Denki & Kabushiki Kaisha
Mitsubishi Electric System LSI Design Corporation
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