Field effect transistor and method of manufacturing the same

Details Field effect transistor and method of manufacturing the same Field effect transistor and method of manufacturing the same

2007-04-03

2007-04-03

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S570000

Reexamination Certificate

active

11000239

ABSTRACT:
There is provided a field effect transistor which is suitable for a power amplifier application or the like, and have a double recess structure with superior repeatability. A film thickness of an AlGaAs layer can determine a depth of a second step of a recess uniquely by using the AlGaAs layer and an InGaP layer with a higher etching selection ratio, a double recess structure can be formed with desirable repeatability, and a high withstand voltage device suitable for a power amplifier application or the like is achieved by making both side surfaces of a gate electrode into the AlGaAs layer.

REFERENCES:
patent: 6534790 (2003-03-01), Kato et al.
patent: 7012286 (2006-03-01), Inai et al.
patent: 945894 (1997-02-01), None
patent: 11150263 (1999-06-01), None

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