Field effect transistor and method of manufacturing same

Details Field effect transistor and method of manufacturing same Field effect transistor and method of manufacturing same

1999-07-02

2000-10-10

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257306, 257770, H01L 21441

Patent

active

061304638

ABSTRACT:
A silicided region (11a) is formed in part of a surface of a gate electrode (3a) which is far from a storage node when a diffusion region (7a) is connected to a bit line and a diffusion region (8a) is connected to the storage node. A silicided region (12a) is formed in a surface of the diffusion region (7a) connected to the bit line. A MOSFET which suppresses a leakage current from the storage node to the gate electrode and decreases the resistance of the diffusion region connected to the bit line and the resistance of said gate electrode is provided.

REFERENCES:
patent: 5444018 (1995-08-01), Yost et al.
patent: 5641983 (1997-06-01), Kato et al.
patent: 5696017 (1997-12-01), Ueno
patent: 6051475 (2000-04-01), Ho et al.

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