Field effect transistor and method of forming a field effect...

Details Field effect transistor and method of forming a field effect... Field effect transistor and method of forming a field effect...

2007-03-09

2009-12-08

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S206000, C438S214000, C438S350000, C438S357000, C438S360000, C257SE21419, C257SE21428

Reexamination Certificate

active

07629211

ABSTRACT:
A method of forming a field effect transistor comprises providing a semiconductor substrate, a gate electrode being formed over the semiconductor substrate. At least one cavity is formed adjacent the gate electrode. A strain-creating element is formed in the at least one cavity. The strain-creating element comprises a compound material comprising a first chemical element and a second chemical element. A first concentration ratio between a concentration of the first chemical element in a first portion of the strain-creating element and a concentration of the second chemical element in the first portion of the strain-creating element is different from a second concentration ratio between a concentration of the first chemical element in a second portion of the strain-creating element and a concentration of the second chemical element in the second strain-creating element.

REFERENCES:
patent: 7545006 (2009-06-01), Chen et al.
patent: 2005/0093075 (2005-05-01), Bentum et al.
patent: 2005/0184345 (2005-08-01), Lin et al.
patent: 2006/0292776 (2006-12-01), Jin et al.
patent: WO 2006/011939 (2006-02-01), None
patent: WO 2006/066194 (2006-06-01), None

Affiliated with

Also associated with

Rating

Field effect transistor and method of forming a field effect... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field effect transistor and method of forming a field effect..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect transistor and method of forming a field effect... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4143297