Field effect transistor and method of fabricating same

Details Field effect transistor and method of fabricating same Field effect transistor and method of fabricating same

2008-07-08

2010-12-21

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S305000, C438S306000, C257SE21433

Reexamination Certificate

active

07855110

ABSTRACT:
An FET and method of fabricating an FET. The method includes forming a gate dielectric layer on a top surface of a silicon region of a substrate and forming a gate electrode on a top surface of the gate dielectric layer; forming a source and a drain in the silicon region and separated by a channel region under the gate electrode, the source having a source extension extending under the gate electrode and the drain having a drain extension extending under the gate electrode, the source, source extension, drain and drain extension doped a first type; and forming a source delta region contained entirely within the source and forming a drain delta region contained entirely within the drain, the delta source region and the delta drain region doped a second dopant type, the second dopant type opposite from the first dopant type.

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