Field effect transistor and method for manufacturing the same

Details Field effect transistor and method for manufacturing the same Field effect transistor and method for manufacturing the same

2005-01-31

2008-08-05

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S284000, C257SE21442

Reexamination Certificate

active

07407845

ABSTRACT:
In one embodiment, a semiconductor device includes a semiconductor substrate having a lower layer and an upper layer overlying the lower layer. The upper layer is arranged and structured to form first and second active regions that are spaced apart from each other and protrude from an upper surface of the lower layer. A third active region of a bridge shape is distanced vertically from the upper surface of the lower layer and connects the first and second active regions. The device further includes a gate electrode, which is formed with a gate insulation layer surrounding the third active region, so that the third active region functions as a channel.

REFERENCES:
patent: 4996574 (1991-02-01), Shirasaki
patent: 5120666 (1992-06-01), Gotou
patent: 5578513 (1996-11-01), Maegawa
patent: 5583362 (1996-12-01), Maegawa
patent: 5926699 (1999-07-01), Hayashi et al.
patent: 6495403 (2002-12-01), Skotnicki et al.
patent: 6657252 (2003-12-01), Fried et al.

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