Field-effect transistor and method for manufacturing a...

Details Field-effect transistor and method for manufacturing a... Field-effect transistor and method for manufacturing a...

2007-12-26

2011-10-04

Parker, Ken A (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000, C257SE21428

Reexamination Certificate

active

08030703

ABSTRACT:
A field-effect transistor and a method for manufacturing a field-effect transistor is disclosed. One embodiment includes a substrate having a surface along which a trench is implemented, wherein the trench has a trench bottom and a trench edge. A source area is implemented at the trench edge and a gate electrode at least partially implemented in the trench and separated from the substrate by an insulation layer. The field-effect transistor includes a drain electrode at a side of the substrate facing away from the surface. An additional electrode is implemented between the gate electrode and the trench bottom and electrically insulated from the substrate and an electrical connection between the additional electrode and the gate electrode, wherein the electrical connection has a predetermined ohmic resistance value.

REFERENCES:
patent: 5637898 (1997-06-01), Baliga
patent: 7319256 (2008-01-01), Kraft et al.
patent: 7465987 (2008-12-01), Krumrey et al.
patent: 2003/0173619 (2003-09-01), Feldtkeller et al.
patent: 2009/0114986 (2009-05-01), Hirler et al.
patent: 1170803 (2002-09-01), None

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