Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-06-02
2000-01-25
Dang, Trung
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438289, 438301, 438306, 438307, H01L 21336
Patent
active
060177985
ABSTRACT:
A low voltage field effect transistor structure (20) is provided with a threshold voltage that is tolerant of process variations that alter the location of a source implant region (41). A first halo region (33) and a second halo region (36) are formed adjacent to source region (41) such that after subsequent thermal processing, a constant doping profile of opposite conductivity as source region (41) is formed in the channel region (23) adjacent the source region (41). The embodiments can be formed either adjacent to only the source region (41) to create a unilateral device, or the doping profile can be formed adjacent to both source region (41) and a drain region (40) to produce a bilateral device. An additional embodiment forms a second implant region in source region (41) to reduce junction leakage and capacitance.
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C. Codella et al., "Submicron IGFET Device with Double Implanted Lightly Doped Drain/Source Structure," IBM Technical Disclosure Bulletin, vol. 26, No. 12, May 1984, pp. 6584-6586.
Dow Diann
Ilderem Vida
Kaneshiro Michael H.
Dang Trung
Dover Rennie W.
Motorola Inc.
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