Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2009-06-25
2011-11-08
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21421
Reexamination Certificate
active
08053318
ABSTRACT:
A MUGFET and method of manufacturing a MUGFET is shown. The method of manufacturing the MUGFET includes forming temporary spacer gates about a plurality of active regions and depositing a dielectric material over the temporary spacer gates, including between the plurality of active regions. The method further includes etching portions of the dielectric material to expose the temporary spacer gates and removing the temporary spacer gates, leaving a space between the active regions and a remaining portion of the dielectric material. The method additionally includes filling the space between the active regions and above the remaining portion of the dielectric material with a gate material.
REFERENCES:
patent: 5874328 (1999-02-01), Liu et al.
patent: 6974729 (2005-12-01), Collaert et al.
patent: 7067868 (2006-06-01), Thean et al.
patent: 7071064 (2006-07-01), Doyle et al.
patent: 7279375 (2007-10-01), Radosavljevic et al.
patent: 2005/0085070 (2005-04-01), Park
patent: 2007/0298549 (2007-12-01), Jurczak et al.
patent: 2008/0116515 (2008-05-01), Gossner et al.
Anderson Brent A.
Nowak Edward J.
Chaudhari Chandra
International Business Machines - Corporation
Kotulak Richard
Roberts Mlotkowski Safran & Cole P.C.
LandOfFree
FET with replacement gate structure and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with FET with replacement gate structure and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and FET with replacement gate structure and method of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4289780