FET device containing a conducting sidewall spacer for local int

Details FET device containing a conducting sidewall spacer for local int FET device containing a conducting sidewall spacer for local int

1999-01-20

2000-10-31

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438233, 257900, 257903, 257344, H01L 21336

Patent

active

061401714

ABSTRACT:
A FET device comprising a semiconductor substrate; diffusion regions in the substrate separated by a channel region; a gate overlapping the channel region and a portion of the diffusion regions and separated from the substrate by a gate dielectric; and a sidewall dielectric on a sidewall of the gate; and a sidewall spacer conductor on the sidewall dielectric contacting one of the diffusion regions but not both of the diffusion regions of one device is provided along with a method for its fabrication. The conductive spacer connects diffusions of adjacent devices that share a common gate electrode.

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