Ferroelectric thin film with intermediate buffer layer

Details Ferroelectric thin film with intermediate buffer layer Ferroelectric thin film with intermediate buffer layer

1994-12-28

1996-11-19

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257310, 257325, H01L 2976

Patent

active

055765645

ABSTRACT:
The present invention provides a substrate providing a ferroelectric crystal thin film which includes an electrode formed on a semiconductor single crystal substrate and a ferroelectric crystal thin film of Bi.sub.4 Ti.sub.3 O.sub.12 formed on the electrode through the intermediary of a buffer layer.

REFERENCES:
patent: 3808674 (1974-05-01), Francombe et al.
patent: 5128007 (1992-07-01), Matsunaga et al.
patent: 5146299 (1992-09-01), Lampe et al.
Shu-Yau Wu, "A New Ferroelectric Memory Device, Metal-Ferroelectric-Semiconductor Transistor", Aug. 1974 pp. 499-503. IEEE Transactions on Electron Devices, vol. ED-21, No. 8.
Database WPI, Section Ch, Week 9507; An 95-048720 and JP-A-06 329 497, Nov. 1994. Abstract.
"Structural and Electric Studies . . . Metallo-Organic Solution Deposition", by P.C. Joshi et al, Journal of Applied Physics Dec. 15, 1992 pp. 5827-5833.
"Ferroelectric Bismuth Titanate Films by Hot Walls Metalorganic Chemical Vapor Deposition", by J. Si et al, Journal of Applied Physics, Jun. 1, 1993, pp. 7910-7913.

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