Ferroelectric structure including MgTiO.sub.3 passivation

Details Ferroelectric structure including MgTiO.sub.3 passivation Ferroelectric structure including MgTiO.sub.3 passivation

1997-10-16

1998-11-10

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257632, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

058348042

ABSTRACT:
An MgTiO.sub.3 film is used as a diffusion-barrier layer and/or a buffer layer for a ferroelectric film such as a PZT film. The MgTiO.sub.3 films may be used in ferroelectric capacitors which can be included in FRAM devices, and in ferroelectric floating gate transistors which can be included in FFRAM devices. Associated fabrication methods are also provided.

REFERENCES:
patent: 4592880 (1986-06-01), Murakami
patent: 5140498 (1992-08-01), Radford et al.
patent: 5623724 (1997-04-01), Gurkovich et al.
Tokumitsu et al., "Film Quality Dependence of Adaptive-Learning Processes in Neurodevices Using Ferroelectric PbZr.sub.x Ti.sub.1-x O.sub.3 (PZT) Films", Journal of Applied Physics, vol. 34(1995) Pt. 1, No. 2B, pp. 1061-1065.

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