Ferroelectric read and write memory and driving method thereof

Details Ferroelectric read and write memory and driving method thereof Ferroelectric read and write memory and driving method thereof

1996-06-07

1997-12-16

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Ferroelectric

G11C 1150

Patent

active

056992904

ABSTRACT:
A ferroelectric read and write memory of a nondestructive write and read (NDWR) method in which charges of a gate insulating layer induced by a ferroelectric capacitor are discharged via a separate path, includes a source and a drain provided in both side of a well; a gate insulating layer provided on the well; a gate electrode provided on the gate insulating layer; a ferroelectric layer provided on the gate electrode, to which corresponding charges are induced in the gate electrode depending on its polar states; an upper electrode provided on the ferroelectric layer; and a charge discharging means electrically connected to the gate electrode for discharging charges induced in the gate insulating layer. In a driving method thereof, charges of the gate insulating layer induced by the ferroelectric layer are directly discharged via the gate electrode to make a logic "low" state by blocking the current flow between the source and insulating layer through the well during a binary logic information write operation. Therefore, if the information is written in a non-inversion state of the polarization, a fatigue of the ferroelectric layer can be prevented. Also, as described above, since the remained polarization still exists during the repeated information write operations, the information can be written at a low voltage.

REFERENCES:
patent: 5559733 (1996-09-01), McMillan et al.

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