Static information storage and retrieval – Read/write circuit – Differential sensing
Patent
1998-08-20
1999-09-28
Le, Vu A.
Static information storage and retrieval
Read/write circuit
Differential sensing
365145, G11C 1122
Patent
active
059599227
ABSTRACT:
A ferroelectric random access memory device includes a plurality of reference cell array blocks implemented in a reference cell array. If the reference voltage from one of the reference cell array blocks is biased toward the voltage level of a logical data "1" or "0", another reference cell array block is chosen, which has ferroelectric capacitors of smaller or larger size than those of the selected reference cell array block. In this manner, the alternate reference cell array block provides the reference bit lines with required reference voltages. As a result, the sensing margin of the memory cells is increased, causing the reliability of the ferroelectric random access memory device to be improved.
REFERENCES:
patent: 5148063 (1992-09-01), Hotta
patent: 5268861 (1993-12-01), Hotta
patent: 5349563 (1994-09-01), Iwase
patent: 5754466 (1998-05-01), Arase
patent: 5844832 (1998-12-01), Kim
Shoji et al., "A 7.03-.mu.m.sup.2 Vcc/2-plate Nonvolatile DRAM Cell with a Pt/PZT/Pt/TiN Capacitor Patterned by One-Mask Dry Etching," IEEE-1996 Symposium on VLSI Technology Digest of Technical Papers, pp. 28-29 (1996).
Koike et al., "A 60ns iMb Nonvolatile Ferroelectric Memory with Non-Driven Cell Plate Line Write/Read Scheme," ISSCC 96, Digest of Technical Paper, Session 23, DRAM, Paper SP23.1, pp. 473-475, Feb. 10, 1996.
Womack, "A 16kb Ferroelectric Nonvolatile Memory with a Bit Parallel Architecture," Session 16, Dynamic RAMs, ISSCC89Friday, Feb. 17, 1989, East Grand Ballroom/10:00 am.
IEEE Journal of Solid-State Circuits, vol. 23, No. 5, pp. 1171-1175, Oct. 1988, "An Experimental 512-bit Nonvolatile Memory with Ferroelectric Storage Cell".
Le Vu A.
Samsung Electronics Co,. Ltd.
LandOfFree
Ferroelectric random access memory device with reference cell ar does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Ferroelectric random access memory device with reference cell ar, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ferroelectric random access memory device with reference cell ar will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-711393