Ferroelectric random access memory device and method for operati

Details Ferroelectric random access memory device and method for operati Ferroelectric random access memory device and method for operati

1998-01-13

2000-07-11

Nelms, David

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, 365210, G11C 1122

Patent

active

060882573

ABSTRACT:
Disclosed is a ferroelectric random access memory having increased endurance and educed power consumption. The ferroelectric random access memory device comprises a bit line precharge circuit for precharging each of the bit lines to a first voltage level, a pulse supply circuit for supplying a first voltage pulse signal to a first electrode of the ferroelectric capacitor corresponding to a selected one of the memory cells for allowing the ferroelectric capacitor to polarize in a predetermined direction, and a drive signal generation circuit for generating two complementary drive signals which vary from a first voltage level to a second voltage level. The ferroelectric random access memory device further includes a comparator circuit for comparing a respective bit line voltage level with a reference voltage level and providing two complementary drive signals to the bit line responsive to the comparison reference voltage and a reference voltage generating circuit for generating the reference voltages supplied to the bit lines in accordance with the voltage levels of the corresponding word lines.

REFERENCES:
patent: 5307304 (1994-04-01), Saito et al.
patent: 5487030 (1996-01-01), Drab et al.
patent: 5822240 (1998-10-01), Yoo

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