Ferroelectric random-access memory

Details Ferroelectric random-access memory Ferroelectric random-access memory

1996-01-29

1997-02-04

Dinh, Son T.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, 365203, 36523003, G11C 1122

Patent

active

056005873

ABSTRACT:
The invention provides a nonvolatile random-access memory using memory cells consisting of a ferroelectric capacitor and a switching transistor. The memory has two memory blocks each of which has memory cells arranged in rows and columns, word lines, bit lines, a plate line, sense amplifiers and reference voltage generators. The memory includes a plate line voltage control circuit which impresses supply voltage to the plate line of one memory block and ground potential to the plate line of the other memory block during a transition period preceding to read or write operation and then connects the two plate lines to thereby keep the connected plate lines at an intermediate voltage between supply voltage and ground potential. To retard fatigue of the ferroelectric material by repeated polarization in positive and negative directions, the memory can optionally be operated in a volatile mode.

REFERENCES:
patent: 4873664 (1989-10-01), Eaton, Jr.
patent: 5086412 (1992-02-01), Jaffe et al.
patent: 5467302 (1995-11-01), Hirano et al.
patent: 5495440 (1996-02-01), Asakura
ISSCC (International Solid-State Circuits Conference) Digest of Technical Papers, Feb. 1994, pp. 268-269.

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