Ferroelectric non-volatile memory unit

Details Ferroelectric non-volatile memory unit Ferroelectric non-volatile memory unit

1994-04-07

1996-06-04

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365117, 257295, G11C 1122, H01L 29788, H01L 29792

Patent

active

055239641

ABSTRACT:
An integrated circuit non-volatile, non-destructive read-out memory unit includes a ferroelectric capacitor having first and second electrodes, a capacitance Cf, and an area Af, and a transistor having a gate, a source and a drain forming a gate capacitor having an area Ag and a gate capacitance Cg, a gate overlap b, and a channel depth a, with the capacitor first electrode connected to the gate of the transistor. The ferroelectric material has a dielectric constant .epsilon.f and the gate insulator has a dielectric constant .epsilon.g. A source of a constant reference voltage is connectable to the first electrode. A bit line connects to the second electrode. In one embodiment the first electrode and gate are the same conductive member. In another embodiment the second electrode and the gate are the same conductive member and the first electrode is formed by extensions of the transistor source and drains underlying the gate, with the ferroelectric material between the source and drain extensions and the gate. The memory unit has the parametric relationships: Cf<5.times.Cg, Af.ltoreq.2Ag, b.gtoreq.2a, and .epsilon.g.gtoreq..epsilon.f/8.

REFERENCES:
patent: 2791760 (1957-05-01), Ross
patent: 2791761 (1957-05-01), Morton
patent: 3832700 (1974-08-01), Wu et al.
patent: 4161038 (1979-07-01), Wu
patent: 4888630 (1989-12-01), Paterson
patent: 5038323 (1991-08-01), Schwee
patent: 5198994 (1993-03-01), Natori
patent: 5227855 (1993-07-01), Momose
patent: 5303182 (1994-04-01), Nakao
P. Arnett, "Ferroelectric FET Device", Feb. 1973, IBM Technical Disclosure Bulletin, vol. 15, No. 9.

Affiliated with

Also associated with

Rating

Ferroelectric non-volatile memory unit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ferroelectric non-volatile memory unit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ferroelectric non-volatile memory unit will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-389357