Ferroelectric memory with feedback circuit

Details Ferroelectric memory with feedback circuit Ferroelectric memory with feedback circuit

1996-03-18

1998-02-24

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, G11C 700

Patent

active

057216991

ABSTRACT:
A memory cell includes a ferroelectric capacitor and a transistor connected between one side of the capacitor and a bit line. A drive circuit includes an operational amplifier having an output, an inverting input, and a non-inverting input. A plate line is connected between the other side of the capacitor and the output. The non-inverting input is connected to a data-in line through a first resistor and to the bit line through a second resistor. The inverting input is connected to a constant voltage source through a third resistor, and to the plate line through a fourth resistor. A first buffer amplifier is connected between the bit line and the second resistor, and a second buffer amplifier is connected between the plate line and the fourth resistor. Voltage is connected to the other one of the operational amplifier inputs.

REFERENCES:
patent: 4809225 (1989-02-01), Diimmler et al.
patent: 4853893 (1989-08-01), Eaton, Jr. et al.
patent: 4873664 (1989-10-01), Eaton, Jr.
patent: 4888733 (1989-12-01), Mobley
patent: 4893272 (1990-01-01), Eaton, Jr. et al.
patent: 4910708 (1990-03-01), Eaton, Jr. et al.
patent: 4914627 (1990-04-01), Eaton, Jr. et al.
patent: 5010518 (1991-04-01), Toda
patent: 5038323 (1991-08-01), Schwee
patent: 5086412 (1992-02-01), Jaffe et al.
patent: 5198706 (1993-03-01), Papaliolios
patent: 5262982 (1993-11-01), Brassington et al.
patent: 5297077 (1994-03-01), Imai et al.
patent: 5309391 (1994-05-01), Papaliolios
patent: 5406510 (1995-04-01), Mihara et al.

Affiliated with

Also associated with

Rating

Ferroelectric memory with feedback circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ferroelectric memory with feedback circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ferroelectric memory with feedback circuit will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1878962