Ferroelectric memory with feedback

Details Ferroelectric memory with feedback Ferroelectric memory with feedback

1997-12-22

1999-05-18

Nelms, David

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, 365117, 36518907, G11C11/22

Patent

active

059056711

ABSTRACT:
A memory cell includes a ferroelectric capacitor and a transistor connected between one side of the capacitor and a bit line. A drive circuit includes an operational amplifier having an output, an inverting input, and a non-inverting input. A plate line is connected between the other side of the capacitor and the output. The non-inverting input is connected to a data-in line through a first resistor and to the bit line through a second resistor. The inverting input is connected to a constant voltage source through a third resistor, and to the plate line through a fourth resistor. A first buffer amplifier is connected between the bit line and the second resistor, and a second buffer amplifier is connected between the plate line and the fourth resistor Voltage is connected to the other one of the operational amplifier inputs.

REFERENCES:
patent: 5721699 (1998-02-01), DeVilbiss

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