Static information storage and retrieval – Systems using particular element – Ferroelectric
Patent
1998-05-29
1999-04-27
Nelms, David
Static information storage and retrieval
Systems using particular element
Ferroelectric
365148, 365149, G11C 1122
Patent
active
058986090
ABSTRACT:
A ferroelectric random access memory having a discharge circuit for stably discharging pyroelectric charges generated in a ferroelectric capacitor without affecting write and read operations is provided. In the ferroelectric random access memory having the discharge circuit according to the present invention, the pyroelectric charges between the ferroelectric capacitor and the FET of the memory cell, generated during the write and read operations are automatically discharged through a resistor since the resistor is included as a discharge path between the contact point of the ferroelectric capacitor and the FET of the memory unit cell and the grounding point. Accordingly, the function of turning on and off the discharge path for discharging the pyroelectric charges is not necessary and the polarization turbulence due to the pyroelectric charges is not generated.
REFERENCES:
patent: 5574679 (1996-11-01), Ohtsuki et al.
Lam David
Nelms David
Samsung Electronics Co,. Ltd.
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