Ferroelectric memory devices with improved ferroelectric...

Details Ferroelectric memory devices with improved ferroelectric... Ferroelectric memory devices with improved ferroelectric...

2006-05-16

2006-05-16

Tran, Thien F. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S303000, C257S304000, C257S306000, C257S307000, C257S308000, C257S309000

Reexamination Certificate

active

07045839

ABSTRACT:
Pursuant to embodiments of the present invention, ferroelectric memory devices are provided which comprise a transistor that is provided on an active region in a semiconductor substrate, and a capacitor that has a bottom electrode, a capacitor-ferroelectric layer and a top electrode. These devices may further include at least one planarizing layer that is adjacent to the side surfaces of the bottom electrode such that the top surface of the planarizing layer(s) and the top surface of the bottom electrode form a planar surface. The capacitor-ferroelectric may be formed on this planar surface. The device may also include a plug that electrically connects the bottom electrode to a source-drain region of the transistor. The ferroelectric memory devices according to embodiments of the present invention may reduce ferroelectric degradation of the capacitor.

REFERENCES:
patent: 5119154 (1992-06-01), Gnadinger
patent: 5854104 (1998-12-01), Onishi et al.
patent: 6406971 (2002-06-01), Chien et al.
patent: 6709875 (2004-03-01), Gilbert et al.
patent: 6717198 (2004-04-01), Yoshikawa et al.
patent: 1998-040642 (1998-08-01), None
patent: 2002 0097479 (2002-12-01), None

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