Ferroelectric memory devices with expanded plate line and...

Details Ferroelectric memory devices with expanded plate line and... Ferroelectric memory devices with expanded plate line and...

2005-10-04

2005-10-04

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S298000, C257S303000, C257S306000, C257S324000, C438S003000, C438S240000

Reexamination Certificate

active

06952028

ABSTRACT:
A ferroelectric memory device includes a lower interlayer dielectric on a semiconductor substrate, a plurality of ferroelectric capacitors, and a plate line. The ferroelectric capacitors are on the lower interlayer dielectric. The plate line extends across and electrically connects to surfaces of at least two adjacent ones of the plurality of ferroelectric capacitors.

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Korean Notice to File Response to a Rejection (w/English Translation), dated May 28, 2004.

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