Ferroelectric memory devices having well region word lines and m

Details Ferroelectric memory devices having well region word lines and m Ferroelectric memory devices having well region word lines and m

1998-03-31

1999-09-28

Nelms, David

Static information storage and retrieval

Systems using particular element

Ferroelectric

36518508, 257295, G11C 1122

Patent

active

059598794

ABSTRACT:
Ferroelectric memory devices include a semiconductor substrate of first conductivity type having a plurality of well regions of second conductivity type therein, and a ferroelectric memory array arranged as a plurality of rows and columns of ferroelectric memory cells extending opposite the plurality of well regions. Each of the ferroelectric memory cells contains source and drain regions of first conductivity type in a corresponding well region, a floating gate extending opposite the corresponding well region and a control gate capacitively coupled by a ferroelectric material to the floating gate. A plurality of plate lines are also provided. Each of the plurality of plate lines is electrically coupled to control gate electrodes of ferroelectric memory cells in a respective row in the memory array. A plurality of bit lines is also provided. Each of the plurality of bit lines is electrically coupled to source regions of ferroelectric memory cells in a respective column in the memory array. A select line is also electrically coupled to drain regions of ferroelectric memory cells in a respective row. To enable high integration, a first word line is electrically coupled to a first well region in the plurality thereof. Accordingly, the well region of each unit memory cell acts as a separate and independently controllable electrode which receives a word line bias during programming and reading operations.

REFERENCES:
patent: 4888630 (1989-12-01), Paterson
patent: 5300799 (1994-04-01), Nakamura et al.
patent: 5412596 (1995-05-01), Hoshiba
patent: 5515311 (1996-05-01), Mihara
patent: 5517445 (1996-05-01), Imai et al.
patent: 5523964 (1996-06-01), McMillan et al.
patent: 5541871 (1996-07-01), Nishimura et al.
patent: 5559733 (1996-09-01), McMillan et al.
patent: 5623439 (1997-04-01), Gotoh et al.
patent: 5753946 (1998-05-01), Naiki et al.
patent: 5768185 (1998-06-01), Nakamura et al.
patent: 5822239 (1998-10-01), Ishihara et al.
patent: 5822240 (1998-10-01), Yoo
patent: 5856688 (1999-01-01), Lee et al.

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