Ferroelectric memory devices having nondestructive read capabili

Details Ferroelectric memory devices having nondestructive read capabili Ferroelectric memory devices having nondestructive read capabili

1997-10-09

1998-11-10

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365145, 365149, G11C 1122

Patent

active

058354000

ABSTRACT:
Ferroelectric memory devices contain an array of ferroelectric memory cells therein and control circuits for enabling the performance of nondestructive read operations. The memory cells of a device contain a ferroelectric memory cell and each memory cell contains a ferroelectric capacitor having a first electrode electrically coupled to a plate line and an access transistor electrically coupled in series between a bit line and a second electrode of the ferroelectric capacitor. A decoder circuit is also provided. The decoder circuit is electrically coupled to the access transistor of the memory cell by a word line and performs the function of, among other things, turning on the access transistor during a read time interval. According to a preferred aspect of the present invention, a pulse generator circuit is provided for initiating nondestructive reading of a quiescent polarization state of the ferroelectric capacitor by applying a single read pulse to the plate line to sweep a polarization state of the ferroelectric capacitor along a noncoercive portion of its hysteresis curve, during the read time interval. A sense amplifier circuit is also provided. The sense amplifier circuit also has a first input electrically coupled to the bit line and a second input electrically coupled to a reference signal line. The sense amplifier performs the function of driving the bit line to a first potential which represents the quiescent polarization state of the ferroelectric capacitor, preferably before termination of the single read pulse.

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