Ferroelectric memory devices having linear reference cells there

Details Ferroelectric memory devices having linear reference cells there Ferroelectric memory devices having linear reference cells there

1998-06-16

1999-10-19

Phan, Trong

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, G11C 1122, G11C 1124

Patent

active

059699825

ABSTRACT:
Nonvolatile ferroelectric-based integrated circuit memory devices utilize reference cells containing linear storage capacitors to inhibit deterioration in reliability typically associated with ferroelectric capacitors which have undergone excessive polarization cycling. These linear storage capacitors are preferably coupled to respective plate lines so that efficient reading operations may be performed. In particular, a nonvolatile memory device is preferably provided which contains a ferroelectric memory cell having an access transistor and a ferroelectric storage capacitor therein. A reference cell is also provided and this reference cell contains an access transistor and a linear storage capacitor therein. In addition, a sense amplifier is provided which has first and second inputs electrically coupled to the access transistors of the ferroelectric memory cell and the reference cell, respectively. To improve the efficiency of reading operations, a reset transistor is preferably provided and this transistor is electrically connected in series between the second input of the sense amplifier and a reference signal line (e.g., ground signal line).

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