Ferroelectric memory devices having an expanded plate electrode

Details Ferroelectric memory devices having an expanded plate electrode Ferroelectric memory devices having an expanded plate electrode

2006-06-20

2006-06-20

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C365S145000, C365S149000

Reexamination Certificate

active

07064366

ABSTRACT:
Ferroelectric memory devices are formed on an integrated circuit substrate. A bottom interlayer dielectric layer is positioned on the integrated circuit substrate and a plurality of ferroelectric capacitors are arranged in a row and column relationship on the bottom interlayer dielectric layer. A top interlayer dielectric layer is disposed on a surface of the integrated circuit substrate including the plurality of ferroelectric capacitors. The top interlayer dielectric layer includes via holes disposed on and associated with ones of the ferroelectric capacitors. A plate electrode is formed in the top interlayer dielectric layer. The plate electrode extends into respective ones of the via holes to contact top surfaces of at least two neighboring ones of the plurality of ferroelectric capacitors. Methods or fabricating ferroelectric memory devices are also provided.

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Notice to Submit Response for corresponding Korean Application No. 10-2003-0012765 dated Aug. 26, 2004 (English Translation).

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