Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2006-09-12
2006-09-12
Mai, Son (Department: 2827)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S149000
Reexamination Certificate
active
07106617
ABSTRACT:
Ferroelectric memory devices include a ferroelectric memory cell. The ferroelectric memory cell has at least one bit line and a plate line. A control circuit drives the at least one bit line with write data substantially concurrently with activation of the plate line during a write operation. The memory devices may also include a sense amplifier coupled to the ferroelectric memory cell and the control circuit may be further configured to deactivate the plate line substantially concurrently with activation of the sense amplifier during a read operation.
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Jeon Byung-Gil
Kim Ki-nam
Mai Son
Myers Bigel & Sibley & Sajovec
Samsung Electronics Co,. Ltd.
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