Ferroelectric memory device guaranteeing electrical interconnect

Details Ferroelectric memory device guaranteeing electrical interconnect Ferroelectric memory device guaranteeing electrical interconnect

1998-06-30

2000-02-01

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438 3, 438596, H01L 218242, H01L 2170

Patent

active

060202335

ABSTRACT:
The present invention provides an improved ferroelectric capacitor used in a memory device by providing reliable electrical interconnection between a lower electrode of the capacitor and an active region of transistor, and to provide a method for fabricating the same. A semiconductor capacitor according to the present invention comprises: a first conducting film filling an opening which is formed in an interlayer insulating film, being in contact with an active region of a semiconductor; a stacked charge storage node including a second conducting film formed on the first conducting film and an interlayer insulating film, a first diffusion preventing film formed on the second conducting film, a lower electrode film formed on the first diffusion preventing film, and a ferroelectric film formed on the lower electrode film; and a conducting spacer film formed on sidewalls of the lower electrode film, the first diffusion preventing film and the second conducting film.

REFERENCES:
patent: 5335138 (1994-08-01), Sandhu et al.
patent: 5508953 (1996-04-01), Fukuda et al.
patent: 5572052 (1996-11-01), Kashihara et al.
patent: 5736437 (1998-04-01), Dennison et al.
patent: 5798903 (1998-08-01), Dhote et al.
patent: 5838035 (1998-11-01), Ramesh

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