Ferroelectric memory device and data protection method thereof

Details Ferroelectric memory device and data protection method thereof Ferroelectric memory device and data protection method thereof

1998-07-10

1999-08-24

Mai, Son

Static information storage and retrieval

Systems using particular element

Ferroelectric

365228, G11C 1122

Patent

active

059432578

ABSTRACT:
A nonvolatile ferroelectric semiconductor random access memory device and a method for protecting ferroelectric memory cell capacitors from data damage are provided. The contents of the FRAM cells are protected against damage when a power supply voltage goes lower than a predetermined threshold voltage level. Since chip power off time is about several milliseconds and it takes several nanoseconds for a memory chip to perform a normal operation such as a read/write operation, the memory device completes the current read/write operation during either unexpected power down or power off mode, thereby protecting data stored in ferroelectric memory cells against damage when a power supply voltage goes down.

REFERENCES:
patent: 5574679 (1996-11-01), Ohtsuki et al.
patent: 5703804 (1997-12-01), Takata et al.

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