Ferroelectric memory device

Details Ferroelectric memory device Ferroelectric memory device

2005-09-20

2005-09-20

Dinh, Son T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S063000, C365S230030

Reexamination Certificate

active

06947309

ABSTRACT:
A ferroelectric memory device, in which wordlines and bitlines are hierarchized and influence of disturbance-noise is reduced, includes: first sub-wordline select switches, each of which are disposed between one of the main-wordlines and one end of one of the sub-wordlines provided for the one main-wordline; first sub-bitline select switches, each of which are disposed between one of the main-bitlines and one end of one of the sub-bitlines provided for the one main-bitline; second sub-wordline select switches, each of which are disposed between the other end of one of the sub-wordlines and the unselected wordline potential supply line; and second sub-bitline select switches, each of which are disposed between the other end of one of the sub-bitlines and the unselected bitline potential supply line, each of the first and second sub-wordline select switches and first and second sub-bitline select switches being driven independently at least in one of the sector regions.

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