Ferroelectric memory and method of operating same

Details Ferroelectric memory and method of operating same Ferroelectric memory and method of operating same

2005-08-02

2005-08-02

Le, Thong Q. (Department: 2818)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S189011

Reexamination Certificate

active

06924997

ABSTRACT:
A ferroelectric memory636includes a group of memory cells (645, 12, 201, 301, 401, 501), each cell having a ferroelectric memory element (44, 218,etc.), a drive line (122, 322, 422, 522etc.) on which a voltage for writing information to the group of memory cells is placed, a bit line (25, 49, 125, 325, 425, 525,etc.) on which information to be read out of the group of memory cells is placed, a preamplifier (20, 42, 120, 320, 420,etc.) between the memory cells and the bit line, a set switch (14, 114, 314, 414, 514,etc.) connected between the drive line and the memory cells, and a reset switch (16, 116, 316, 416, 516,etc.) connected to the memory cells in parallel with the preamplifier. The memory is read by placing a voltage less than the coercive voltage of the ferroelectric memory element across a memory element. Prior to reading, noise from the group of cells is discharged by grounding both electrodes of the ferroelectric memory element.

REFERENCES:
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patent: 6614678 (2003-09-01), Kato et al.
patent: 1170753 (2002-01-01), None
patent: 1176601 (2002-01-01), None

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