Ferroelectric memory and method for manufacturing the same

Details Ferroelectric memory and method for manufacturing the same Ferroelectric memory and method for manufacturing the same

2007-03-13

2007-03-13

Pizarro-Crespo, Marcos D. (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S253000

Reexamination Certificate

active

11029355

ABSTRACT:
A capacitor upper electrode and a wiring are electrically connected to each other by using a plug and a conductive layer formed below a capacitive element without using a plug that directly connects the capacitor upper electrode to the wiring provided thereon via an interlayer insulating film therebetween. Alternatively, the capacitor upper electrode is covered by a conductive hydrogen barrier film, and the capacitor upper electrode and the wiring are electrically connected to each other via both a plug connecting the wiring and the conductive hydrogen barrier film to each other and the conductive hydrogen barrier film.

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