Ferroelectric memory and method for controlling operation of the

Details Ferroelectric memory and method for controlling operation of the Ferroelectric memory and method for controlling operation of the

1996-01-04

1997-04-01

Dinh, Son T.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, G11C 700

Patent

active

056173490

ABSTRACT:
A ferroelectric memory includes a circuit for temporarily controlling a parasitic capacitance of a pair of data signal lines to an optimum value when data is read out from a memory cell, for the purpose of minimizing a variation of the voltage on the pair of data signal lines caused by factor other than the current caused due to the polarization of the ferroelectric capacitor. Thus, a voltage not smaller than the coercive voltage can be applied between the opposing electrodes of the ferroelectric capacitor, with the result that a sufficient read-out signal voltage can be obtained.

REFERENCES:
patent: 4873664 (1989-10-01), Eaton, Jr.
patent: 5262982 (1993-11-01), Brassington et al.
patent: 5515312 (1996-05-01), Nakakuma et al.
1988 IEEE International Solid-State Circuits Conference (ISSCC), Feb. 18, 1988, Digest of Technical Papers, pp. 130-131.
1994 IEEE International Solid-State Circuits Conference (ISSCC), Feb. 18, 1994, Digest of Technical Papers, pp. 268-269.

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