Ferroelectric memory

Details Ferroelectric memory Ferroelectric memory

1999-09-23

2000-08-29

Dinh, Son T.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365210, G11C 1122

Patent

active

061117773

ABSTRACT:
A dummy cell is provided in every column and consists of a dummy capacitor and two transistors. When the charge of the ferroelectric capacitor is released to one of a bit line pair, a first dummy word line is selected and charge of the dummy capacitor is released to the other of the bit line pair by way of one of the two transistors. When the charge of the ferroelectric capacitor is released to the other of the bit line pair, a second dummy word line is selected and the charge of the dummy capacitor is released to one of the bit line pair by way of the other one of the two transistors. When either one of the first and second dummy word lines is selected the dummy plate driver supplies a clock signal to the dummy capacitor.

REFERENCES:
patent: 5572459 (1996-11-01), Wilson et al.
patent: 5694353 (1997-12-01), Koike
patent: 5822237 (1998-10-01), Wilson et al.
patent: 5898608 (1999-04-01), Hirano et al.
patent: 5910911 (1999-06-01), Sekiguchi et al.
patent: 5926413 (1999-07-01), Yamada et al.
patent: 5959922 (1999-09-01), Jung
patent: 6026009 (2000-02-01), Choi et al.

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