Ferroelectric memory

Details Ferroelectric memory Ferroelectric memory

1994-10-07

1996-01-02

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365 53, G11C 1122

Patent

active

054814901

ABSTRACT:
Disclosed is a ferroelectric memory, comprising a semiconductor substrate, a ferroelectric thin film capacitor of a laminate structure formed on the substrate, the laminate structure consisting of a lower electrode, an oxide ferroelectric thin film and an upper electrode, and a protective thin film formed to cover at least the upper surface of the capacitor and consisting essentially of a nitride of aluminum, silicon or titanium.

REFERENCES:
patent: 3701121 (1972-10-01), Fraser

Affiliated with

Also associated with

Rating

Ferroelectric memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ferroelectric memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ferroelectric memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-240975